1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
[1] When switched from IF
= 10 mA to IR
=10mA; RL
= 100
Ω; measured at IR
=1mA.
BAV99 series
High-speed switching diodes
Rev. 8 — 18 November 2010 Product data sheet
Table 1. Product overview
Type number
Package
Configuration
Package
configuration
NXP
JEITA
JEDEC
BAV99 SOT23 - TO-236AB dual series small
BAV99S SOT363 SC-88 - quadruple; 2 series very small
BAV99W SOT323 SC-70 - dual series very small
∨
High switching speed: trr
≤
4ns
∨
Low capacitance: Cd
≤
1.5 pF
∨
Low leakage current
∨
Reverse voltage: VR
≤
100 V
∨
Small SMD plastic packages
∨
AEC-Q101 qualified
∨
High-speed switching
∨
Reverse polarity protection
∨
General-purpose switching
Table 2. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
IR
reverse current VR
=80V - - 0.5
μA
VR
reverse voltage - - 100 V
trr
reverse recovery time
[1]
--4ns
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